Semiconductor light emitting device suppressing radiation of light other than light having desired wavelength

摘要

A luminescence structure is formed on a substrate made of semiconductor or insulator. The luminescence structure has a lamination structure that an active layer made of semiconductor is sandwiched between a pair of clad layers made of semiconductor. The clad layer is made of the semiconductor having a band gap wider than an energy corresponding to a peak wavelength of an EL spectrum of the active layer. A carrier trap layer is disposed between the substrate and luminescence structure. A peak wavelength of an EL spectrum of the carrier trap layer is longer than a wavelength corresponding to a band gap of the substrate and the peak wavelength of the EL spectrum of the active layer. Electrodes are formed to inject current into the active layer.