System, method, and apparatus for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing

摘要

A wafer-level shunt is incorporated into a sensor design. The sensor is formed with two shields. When the ABS is etched into the slider, this region of the ABS is recessed to form a deep etch region. A top of the shunt is centered in this region and a bottom of the shunt is located therebelow. The two shields form the sensor leads and are electrically connected to the shunt. The shunt is fabricated by depositing and plating a shield one seed layer, and plating a shield one bar for the shunt. A protection layer protects the seed between shield one and the shield one shunt material. Some of the material is deposited, milled, and refilled with insulation. The unmilled material remains as the sensor and the deep etch shunt. Shield two is deposited and connects to the top of the deep etch shunt. A metallic lead connection is located between the two shields to short the shield two shunt material to shield two of the sensor.