发明名称 |
Quantum well transistor using high dielectric constant dielectric layer |
摘要 |
A quantum well transistor or high electron mobility transistor may be formed using a replacement metal gate process. A dummy gate electrode may be used to define sidewall spacers and source drain contact metallizations. The dummy gate electrode may be removed and the remaining structure used as a mask to etch a doped layer to form sources and drains self-aligned to said opening. A high dielectric constant material may coat the sides of said opening and then a metal gate electrode may be deposited. As a result, the sources and drains are self-aligned to the metal gate electrode. In addition, the metal gate electrode is isolated from an underlying barrier layer by the high dielectric constant material.
|
申请公布号 |
US2006148182(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20050028378 |
申请日期 |
2005.01.03 |
申请人 |
DATTA SUMAN;BRASK JUSTIN K;KAVALIEROS JACK;METZ MATTHEW V;DOCZY MARK L;CHAU ROBERT S |
发明人 |
DATTA SUMAN;BRASK JUSTIN K.;KAVALIEROS JACK;METZ MATTHEW V.;DOCZY MARK L.;CHAU ROBERT S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|