Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memories

摘要

Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT (tetrakis (dimethylamino) titanium) and TrDMASI (tris (dimethylamino) silane), for example in a metal organic chemical vapor deposition chamber (52), a relatively high percentage of silicon may be achieved in reasonable deposition times. Two separate bubblers (58a,58b) may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber (52) so that the relative proportions of the precursors can be readily controlled.