Method for forming the gate oxide of semiconductor device,申请号KR20040110217-传众专利搜索

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发明名称	Method for forming the gate oxide of semiconductor device
摘要
申请公布号	KR100596883(B1)	申请公布日期	2006.07.05
申请号	KR20040110217	申请日期	2004.12.22
申请人		发明人
分类号	H01L21/31;H01L21/336	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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