| 摘要 |
A memory includes a phase change memory element having a memory layer (350) of a calcogenide material and an adhesion layer (1000,1002,1004,1006,1008,1010) of an alloy of the form Ti a X b N c where X is selected in the group comprising silicon, aluminum, carbon, or boron, and c may be 0. The nitrogen and silicon are adapted to reduce the diffusion of titanium toward the chalcogenide layer.
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