Manufacturing method of compound semiconductor wafer

摘要

A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.