METHOD FOR FABRICATION OF CMOS IMAGE SENSOR CAPABLE OF INCREASING CHARACTERISTIC OF DARK CURRENT,申请号KR20040115882-传众专利搜索

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发明名称	METHOD FOR FABRICATION OF CMOS IMAGE SENSOR CAPABLE OF INCREASING CHARACTERISTIC OF DARK CURRENT
摘要
申请公布号	KR20060077092(A)	申请公布日期	2006.07.05
申请号	KR20040115882	申请日期	2004.12.30
申请人	MAGNACHIP SEMICONDUCTOR, LTD.	发明人	PARK, JUNG GOO
分类号	H01L27/146;H01L31/10	主分类号	H01L27/146
代理机构		代理人
主权项
地址

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