METHOD FOR FORMING PATTERN USING PLASMA ETCH AND METHOD FOR FORMING GATE ELECTRODE HAVING STRUCTURE OF METAL-INSULATOR-SEMICONDUCTOR USING THE SAME,申请号KR20040116035-传众专利搜索

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发明名称	METHOD FOR FORMING PATTERN USING PLASMA ETCH AND METHOD FOR FORMING GATE ELECTRODE HAVING STRUCTURE OF METAL-INSULATOR-SEMICONDUCTOR USING THE SAME
摘要
申请公布号	KR20060077228(A)	申请公布日期	2006.07.05
申请号	KR20040116035	申请日期	2004.12.30
申请人	MAGNACHIP SEMICONDUCTOR, LTD.	发明人	MOON, BONG WOONG
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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