发明名称 |
COMPOSITION FOR FORMING ETCHING STOPPER LAYER |
摘要 |
An object of the present invention is to provide a composition for formation of etching stopper layer, which can simultaneously realize dry etching selectivity and low permittivity, and a production process of a semiconductor device using the same. This object can be attained by a composition for formation of etching stopper layer, comprising a silicon-containing polymer, the silicon-containing polymer contained in the composition comprising a disilylbenzene structure, and a production process of a semiconductor device comprising forming an etching stopper layer using the composition.
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申请公布号 |
EP1677343(A1) |
申请公布日期 |
2006.07.05 |
申请号 |
EP20040787789 |
申请日期 |
2004.09.09 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
TASHIRO, YUJI;AOKI, HIROYUKI;ISHIKAWA, TOMONORI |
分类号 |
C08G77/52;C09D183/14;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):H01L21/312;H01L21/306 |
主分类号 |
C08G77/52 |
代理机构 |
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代理人 |
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主权项 |
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