Device for manufacturing a mask by plasma etching of a semiconductor substrate

摘要

The device has a semiconductor substrate whose surface is covered with a transmission mask to protect a zone not to be etched and to exposes pattern zones (31a, 31b) to be etched. A generation unit generates plasma in the form of flow of ions towards the substrate. Ions ionizing unit has vertical plates (33a-33e) forming a screen placed above the substrate and along a limit separating the zones (31a, 31b) and the zone not to be etched.