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发明名称
NON-VOLATILE FERROELECTRIC MEMORY DEVICE
摘要
申请公布号
KR20060076656(A)
申请公布日期
2006.07.04
申请号
KR20040115419
申请日期
2004.12.29
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KANG, HEE BOK;AHN, JIN HONG;LEE, JAE JIN
分类号
H01L21/8247;H01L21/28;H01L21/31;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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