Method for packaging a microelectronic device using on-die bond pad expansion

摘要

Expanded bond pads are formed over a passivation layer on a semiconductor wafer before the wafer is diced into individual circuit chips. After dicing, the individual chips are packaged by fixing each chip within a package core and building up one or more metallization layers on the resulting assembly. In at least one embodiment, a high melting temperature (lead free) alternative bump metallurgy (ABM) form of controlled collapse chip connect (C4) processing is used to form relatively wide conducting platforms over the bond pads on the wafer.