| 摘要 |
A semiconductor device and fabricating method thereof can prevent an electrical characteristic degradation of the semiconductor device when a boarderless type contact is formed. The device may include a transistor on a semiconductor substrate, an oxynitride layer on the semiconductor sustrate,an insulating interlayer on the oxynitride layer, a metal line on the insulating interlayer, contact perforating the insulating interlayer and the oxynitride layer to electrically connect the metal line to the transistor. |
