发明名称 |
Barrier metal re-distribution process for resistivity reduction |
摘要 |
A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.
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申请公布号 |
US7071095(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20040850763 |
申请日期 |
2004.05.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HUANG CHENG-LIN;HSIEH CHING-HUA;SHUE SHAU-LIN |
分类号 |
H01L21/4763;H01L21/285;H01L21/306;H01L21/311;H01L21/3213;H01L21/44;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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