发明名称 |
Method of fabricating silicon integrated circuit on glass |
摘要 |
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad material; activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate; removing the heat pad material; and completing the silicon integrated circuit.
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申请公布号 |
US7071042(B1) |
申请公布日期 |
2006.07.04 |
申请号 |
US20050073163 |
申请日期 |
2005.03.03 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;HSU SHENG TENG;LEE JONG-JAN;TWEET DOUGLAS J. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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