发明名称 Method of fabricating silicon integrated circuit on glass
摘要 A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad material; activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate; removing the heat pad material; and completing the silicon integrated circuit.
申请公布号 US7071042(B1) 申请公布日期 2006.07.04
申请号 US20050073163 申请日期 2005.03.03
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 MAA JER-SHEN;HSU SHENG TENG;LEE JONG-JAN;TWEET DOUGLAS J.
分类号 H01L21/84 主分类号 H01L21/84
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