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发明名称
PROCESS EQUIPMENT WITH SOURCE GAS INJECTOR ABOUT METHOD OF HIGH DENSITY PLASMA
摘要
申请公布号
KR20060075433(A)
申请公布日期
2006.07.04
申请号
KR20040114218
申请日期
2004.12.28
申请人
HYNIX SEMICONDUCTOR INC.
发明人
YOON, YANG HAN
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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