发明名称 |
Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
摘要 |
An interconnect structure of a semiconductor device includes a tungsten plug ( 14 ) deposited in a via or contact window ( 11 ). A barrier layer ( 15 ) separates the tungsten plug ( 14 ) from the surface of a dielectric material ( 16 ) within which the contact window or via ( 11 ) is formed. The barrier layer ( 15 ) is a composite of at least two films. The first film formed on the surface of the dielectric material ( 16 ) within the via ( 11 ) is a tungsten silicide film ( 12 ). The second film is a tungsten film ( 13 ) formed on the tungsten silicide film ( 12 ). A tungsten plug ( 14 ) is formed on the tungsten film ( 13 ) to complete interconnect structure. The barrier layer ( 15 ) is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target ( 19 ) from which the tungsten silicide film ( 12 ) is deposited, and a tungsten coil ( 20 ) from which the tungsten film ( 20 ) is deposited.
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申请公布号 |
US7071563(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20010967094 |
申请日期 |
2001.09.28 |
申请人 |
AGERE SYSTEMS, INC. |
发明人 |
BHOWMIK SIDDHARTHA;MERCHANT SAILESH MANSINH;SIMPSON DARRELL L. |
分类号 |
C23C14/06;H01L21/4763;C23C14/14;C23C14/34;H01L21/28;H01L21/285;H01L21/768;H01L23/485 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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