发明名称 |
Enhancing adhesion of silicon nitride films to carbon-containing oxide films |
摘要 |
Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.
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申请公布号 |
US7071129(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20020242086 |
申请日期 |
2002.09.12 |
申请人 |
INTEL CORPORATION |
发明人 |
JAN CHIA-HONG;SCHERBAN TRACEY;ZHOU YING;SCHAFER ADAM;SCHROEDER BRETT ROBERT |
分类号 |
H01L21/26;H01L21/31;H01L21/316;H01L21/318;H01L21/324;H01L23/48;H01L23/532 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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