| 发明名称 |
Stress mitigation layer to reduce under bump stress concentration |
| 摘要 |
In some embodiments, the invention provides a stress mitigation layer that reduces stress in a layer of a microelectronic device that is below a conductive connection structure, such as a bump.
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| 申请公布号 |
US7071554(B2) |
申请公布日期 |
2006.07.04 |
| 申请号 |
US20040856307 |
申请日期 |
2004.05.27 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HUSSEIN MAKAREM A.;HE JUN |
| 分类号 |
H01L23/48;H01L21/44;H01L23/485;H01L29/76 |
主分类号 |
H01L23/48 |
| 代理机构 |
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