MEMORY DEVICES EMPLOYING DENDRIMERS

摘要

A memory device comprising an organic material layer between an upper electrode and a lower electrode. The organic material layer comprises a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.