| 摘要 |
For manufacturing an SOI substrate, the following steps are carried out: providing a wafer of semiconductor material; forming, inside the wafer, a plurality of passages forming a labyrinthine cavity and laterally delimiting a plurality of pillars of semiconductor material; and oxidizing the pillars of semiconductor material to form a buried insulating layer. For forming the labyrinthine cavity, a trench is first formed in a substrate; an epitaxial layer is grown, which closes the trench at the top; the wafer is annealed so as to deform the pillars and cause them to assume a minimum-energy handlebar-like shape, and a peripheral portion of the wafer is removed to reach the labyrinthine cavity, and side inlet openings are formed in the labyrinthine cavity. Oxidation is performed by feeding an oxidizing fluid through the side inlet openings.
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