发明名称 Gallium nitride material devices including an electrode-defining layer and methods of forming the same
摘要 Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.
申请公布号 US7071498(B2) 申请公布日期 2006.07.04
申请号 US20030740376 申请日期 2003.12.17
申请人 NITRONEX CORPORATION 发明人 JOHNSON JERRY W.;THERRIEN ROBERT J.;VESCAN ANDREI;BROWN JEFFREY D.
分类号 H01L31/072;H01L21/285;H01L21/329;H01L21/335;H01L29/20;H01L29/80;H01L29/872;H01L31/0328;H01L31/0336;H01L31/109 主分类号 H01L31/072
代理机构 代理人
主权项
地址