发明名称 |
Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
摘要 |
Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines (at least in part) dimensions of the electrode. In some cases, the electrode-defining layer is a passivating layer that is formed on a gallium nitride material region.
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申请公布号 |
US7071498(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20030740376 |
申请日期 |
2003.12.17 |
申请人 |
NITRONEX CORPORATION |
发明人 |
JOHNSON JERRY W.;THERRIEN ROBERT J.;VESCAN ANDREI;BROWN JEFFREY D. |
分类号 |
H01L31/072;H01L21/285;H01L21/329;H01L21/335;H01L29/20;H01L29/80;H01L29/872;H01L31/0328;H01L31/0336;H01L31/109 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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