| 摘要 |
The present invention provides a method of forming a semiconductor device that has a plurality of pin junctions comprising silicon films formed on a substrate by using a radio-frequency plasma CVD method, including: forming a first semiconductor layer; covering a surface of the first semiconductor layer with a member containing water with a content of 0.01 to 0.5 wt % so as to contact each other; removing the member; and forming a second semiconductor layer on the first semiconductor layer. According to the present invention, it is possible to efficiently form a semiconductor device having a multi-layer structure where a number of silicon thin films are laminated, to form a semiconductor device having less variation in characteristics among lots and having more excellent uniformity and characteristics, and to provide a semiconductor device excelling in adhesion and environmental resistance.
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