首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
METHOD FOR FORMING GATE SPACER OF MOS TRANSISTOR
摘要
申请公布号
KR20060076070(A)
申请公布日期
2006.07.04
申请号
KR20040115760
申请日期
2004.12.29
申请人
DONGBU ELECTRONICS CO., LTD.
发明人
LEE, YOUNG SEONG
分类号
H01L21/336;H01L21/335
主分类号
H01L21/336
代理机构
代理人
主权项
地址
您可能感兴趣的专利
DETECTING DEVICE FOR FLUIDIZED STATE
STANDARD-REFLECTING-FACE HOLDING DEVICE AND MOUNTING-ANGLE ADJUSTING DEVICE
DEVICE FOR INSPECTING ADHESION OF COVER TAPE OF TAPELIKE PACKAGE FOR ELECTRONIC COMPONENT
ACOUSTIC LEAK TESTER
EQUIPMENT AND METHOD FOR MEASURING THRUST OF PROPULSION DEVICE USED IN SPACE ON GROUND
Universal protocol programmable communications interface
Semiconductor memory device and operating method therefor
Surge protection circuit module and method for assembling same
Projection lens incorporating a pair of matching plastic lenses
Tonal conversion method of a picture
Image reading apparatus
Sample and hold flyback phase control circuit for a null seeking fiber optic gyroscope
Bus synchronization apparatus and method
Triaxial split-gain ring laser gyroscope
Multiplexing transmission apparatus for image signal and multiplexing system
High intensity guided ultrasound source
Eddy current inspection method employing a probe array with test and reference data acquisition and signal processing
Nuclear detection process with base potential correction and corresponding apparatus (particularly a gamma-camera)
Preparation of dialkyl peroxides
Method for fabricating paired MOS transistors having a current-gain differential
