Method for gettering transition metal impurities in silicon crystal,申请号KR20047010635-传众专利搜索

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发明名称	Method for gettering transition metal impurities in silicon crystal
摘要
申请公布号	KR100596701(B1)	申请公布日期	2006.07.04
申请号	KR20047010635	申请日期	2003.01.09
申请人		发明人
分类号	H01L21/322;C30B29/06;C30B33/00	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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