发明名称 |
Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same |
摘要 |
An MEMS device using an SOI wafer includes a first silicon layer, an insulation layer formed on the first insulation layer, a second silicon layer formed an the insulation layer, a protective layer formed on the second silicon layer, and a ground hole extending from an upper portion of the protective layer to the first silicon layer and having a conductive material therein. A handle wafer in the MEMS device is connected to the ground hole without performing any additional wiring or bonding process.
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申请公布号 |
US7071016(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20040915551 |
申请日期 |
2004.08.11 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK KYU YEON;KIM KI HOON |
分类号 |
G01P15/00;H01L21/00;B81B7/00;G01P15/08;H01L27/01;H01L27/12;H01L29/84;H01L31/0392 |
主分类号 |
G01P15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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