发明名称 Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same
摘要 An MEMS device using an SOI wafer includes a first silicon layer, an insulation layer formed on the first insulation layer, a second silicon layer formed an the insulation layer, a protective layer formed on the second silicon layer, and a ground hole extending from an upper portion of the protective layer to the first silicon layer and having a conductive material therein. A handle wafer in the MEMS device is connected to the ground hole without performing any additional wiring or bonding process.
申请公布号 US7071016(B2) 申请公布日期 2006.07.04
申请号 US20040915551 申请日期 2004.08.11
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK KYU YEON;KIM KI HOON
分类号 G01P15/00;H01L21/00;B81B7/00;G01P15/08;H01L27/01;H01L27/12;H01L29/84;H01L31/0392 主分类号 G01P15/00
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