发明名称 |
III group nitride system compound semiconductor light emitting element and method of making same |
摘要 |
A III group nitride system compound semiconductor light emitting element has: a transparent substrate that is of a material except for III group nitride system compound semiconductor; a convex light trapping member that is formed directly or through a buffer layer on the surface of the transparent substrate; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The light trapping member has a refractive index substantially equal to that of the transparent substrate or closer to that of the transparent substrate than that of the III group nitride system compound semiconductor layer.
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申请公布号 |
US7071495(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20030694811 |
申请日期 |
2003.10.29 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
UEMURA TOSHIYA |
分类号 |
H01L33/12;H01L33/20;H01L33/32;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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