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发明名称
随机存取记忆体阵列电路及静态随机存取记忆体装置
摘要
一种随机存取记忆体(SRAM)装置,可根据所需之记忆胞电流来程式化此SRAM以具有1位元元件或是多位元元件(亦即具2个或复数闩锁)。若电流量需求较低时,记忆胞可具有一单一位元元件,若电流量需求较高时,则记忆胞可具有两个或复数位元元件。随机存取记忆体装置包括一记忆胞、复数存取装置以及一字元线。记忆胞具有一个或者复数如双稳态闩锁之位元元件。存取装置,如传送电晶体,耦接于每一位元元件及一位元线之间。字元线耦接至传送电晶体之控制端,用以控制位元元件与位元线间之通讯。
申请公布号
TW200623126
申请公布日期
2006.07.01
申请号
TW094127099
申请日期
2005.08.10
申请人
台湾积体电路制造股份有限公司
发明人
谢祯辉;陈昆龙
分类号
G11C11/417
主分类号
G11C11/417
代理机构
代理人
洪澄文;颜锦顺
主权项
地址
新竹市新竹科学工业园区力行六路8号
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