| 摘要 |
<p>WHEN A LIGHT IS IRRADIATED ON AND NEAR SEPARATED PORTIONS OF A LIGHT- RECEIVING ELEMENT, A FREQUENCY CHARACTERISTIC GROWS WORSE. ACCORDING THE PRESENT INVENTION, A LIGHT- RECEIVING ELEMENT IS FORMED ON SEMICONDUCTOR SUBSTRATE (2) BY A JUNCTION PORTION OF A FIRST CONDUCTIVITY- TYPE FIRST SEMICONDUCTOR PORTION (32) AND A SECOND CONDUCTIVITY- TYPE SECOND SEMICONDUCTOR PORTION (31), I.E.P-N JUNCTION. THEN, A SECOND CONDUCTIVITY- TYPE SEPARATING REGION (40) IS FORMED ON A PART OF THE FIRST SEMICONDUCTOR PORTION. WITH APPLICATION OF A REVERSE- BIAS VOLTAGE LOWER THAN A REVERSE- BIAS VOLTAGE APPLIED TO THE JUNCTION PORTION WHEN THE LIGHT- RECEIVING ELEMENT IS DRIVEN, THE FIRST SEMICONDUCTOR PORTION IS SEPARATED INTO A PLURALITY OF PORTIONS BY A SPREAD OF A DEPLETION LAYER (41) FROM THE JUNCTION PORTION COMPRISING THE LIGHT- RECEIVING ELEMENT AND THE JUNCTION PORTION COMPRISED OF THE SEPARATING REGION, WHEREBY THE FREQUENCY CHARACTERISTIC IS IMPROVED.FIGURE 3</p> |
