发明名称 |
Robust Ultra-Low K Interconnects Structures Using Bridge-Then-Metallization Fabrication Sequence |
摘要 |
A method for fabricating low k and ultra-low k multilayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielectric through a perforated bridge layer that connects the top surfaces of the interconnects laterally; performing multilevel extraction of a sacrificial layer; sealing the bridge in a controlled manner; and decreasing the effective dielectric constant of a membrane by perforating it using sub-optical lithography patterning techniques. |
申请公布号 |
KR100596297(B1) |
申请公布日期 |
2006.06.30 |
申请号 |
KR20030088561 |
申请日期 |
2003.12.08 |
申请人 |
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发明人 |
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分类号 |
H01L23/12;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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