| 摘要 |
A NOVEL PROCESS FOR PRODUCING A SEMICONDUCTOR ARTICLE (11; 12; 13; 15; 31; 33; 34; 38; 36,37;39) IS DISCLOSED WHICH COMPRISES STEPS OF PREPARING A FIRST SUBSTRATE (11-14; 31-37) CONSTITUTED OF A SILICON SUBSTRATE, A NONPOROUS SEMICONDUCTOR LAYER FORMED ON THE SILICON SUBSTRATE, AND AN ION IMPLANTATION LAYER (14; 32; 35) FORMED IN AT LEAST ONE OF THE SILICON SUBSTRATE AND THE NONPOROUS SEMICONDUCTOR LAYER; BONDING THE FIRST SUBSTRATE (11-14; 31-37) SECOND SUBSTRATE (15; 38; 39) TO OBTAIN A MULTIPLE LAYER STRUCTURE (11-15; 31-39) WITH THE NONPOROUS SEMICONDUCTOR LAYER PLACED INSIDE; SEPARATING THE MULTIPLE LAYER STRUCTURE AT THE ION IMPLANATION LAYER; AND REMOVING THE ION IMPLANTATION LAYER (14; 32; 35) REMAINING ON THE SEPARATED SECOND SUBSTRATE.FIGURE 1A-1E
|
