Programmable metallization cell-type non-volatile rewritable memory, has heating unit placed directly under inert cathode without contact between anode and cathode, where voltage is applied between contacts to permit heating of active zone

摘要

The memory has an active zone (4), an inert cathode (6) and an anode (8). A heating unit (20) is placed directly under the inert cathode without any contact between the anode and the cathode. A voltage is applied between contacts (10, 16) to permit writing in the zone and a voltage is applied between contacts (16, 18) to permit heating of the zone during writing.