| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface-wave-excited plasma CVD apparatus which forms a homogeneous thin film with a uniform thickness on a substrate having a large area. <P>SOLUTION: The surface-wave-excited plasma CVD apparatus 100 is provided with a material gas introduction system 10 and a discharge gas introduction system 30; and estranges a material gas G1 with surface-wave-excited plasma P to form the film of the estranged component on the substrate S. The material gas G1 passes through gas introduction pipes 12, 22 and 23 which are branched at a branching point Q1, and is introduced into a chamber 1 through shower heads 15a, 24a and 27a. The gas introduction pipes 12, 22 and 23 are provided with needle valves 12a, 22a and 23a respectively which adjust a flow rate of the material gas G1 passing through them so as to equalize the amounts of the gases introduced from the shower heads 15a, 24a and 27a into the chamber 1, and uniformize the concentration distribution of the material gas in the chamber 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
