发明名称 SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated-circuit device which attains a high efficiency and stabilization of operation by a simple structure. SOLUTION: A plurality of first signal wiring sensitive to a noise are located in the same wiring layer adjacently each other, and the wiring of power source supplying a voltage of a power source or a ground potential is located through the wiring layer of an upper layer of the plurality of first wiring, and a pair of first dummy wiring, which is composed of the same wiring layer to the plurality of first signal wiring and are located parallel to the first signal wiring located on its both ends and are joined to the wiring of power source, are located, and a second dummy wiring layer, which is composed of the wiring layer of lower layer of the plurality of first wiring layer and is joined to the first dummy wiring and encloses the plurality of first signal wiring with the wiring of power source and the first dummy wiring, is located, and a signal line insensitive to an intermediate voltage or noise is located on the lower side of the plurality of first signal wiring layer to protect the first signal wiring in sensitive to the noise from the source of noise. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173529(A) 申请公布日期 2006.06.29
申请号 JP20040367687 申请日期 2004.12.20
申请人 RENESAS TECHNOLOGY CORP 发明人 TAMURA AKIHIRO;HAYASHI HIROBUMI
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
代理机构 代理人
主权项
地址