| 摘要 |
PROBLEM TO BE SOLVED: To provide a large-capacity semiconductor memory device which can be integrated at high density with a low cost without involving an increase in the surface area of a memory cell. SOLUTION: A memory element comprises a first memory function body 120 formed on a semiconductor layer and having a charge holding function; a control gate electrode 106 formed on the first memory function body 120; a channel region disposed below the first memory function body 120, diffusion regions 101, 102 disposed at both sides of the channel region and having a conduction type opposed to the channel region; and second memory function bodies 108, 109 disposed at both sides or one side of the first memory function body 120 and the control gate electrode 106 and having a charge holding function and formed so as to come into contact with the diffusion regions 101, 102. COPYRIGHT: (C)2006,JPO&NCIPI
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