| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage wherein a write current can be reduced, and to provide a manufacturing method thereof. SOLUTION: This magnetic storage comprises a magnetoresistive effect element MTJ, first writing wiring 21 comprising a first wiring layer which is disposed below the magnetoresistive effect element and has a portion projecting toward the magnetoresistive effect element, a first yoke layer having a first region covering the side wall of the first wiring layer, a second region covering the underside of the first wiring layer, and a third region which is formed to be contiguous to both side walls of the projecting portion and is magnetically coupled to the first and the second regions, and second writing wiring 22 comprising a second wiring layer which is disposed above the magnetoresistive effect element and has a portion projecting toward the magnetoresistive effect element, a second yoke layer having a fourth region covering the side wall of the second wiring layer, a fifth region covering the top face of the second wiring layer, and a sixth region which is formed to be contiguous to both side walls of the projecting portion and is magnetically coupled to the fourth and the fifth regions. COPYRIGHT: (C)2006,JPO&NCIPI
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