发明名称 ORGANIC TRANSISTOR AND FORMING METHOD FOR ORGANIC TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic transistor which has high mobility of carries and whose threshold voltage and operating voltage are suppressed low. SOLUTION: The organic transistor has a gate electrode formed on a substrate, a gate insulating film formed on the gate electrode, an organic semiconductor film formed on the gate insulating film, and a 1st electrode and a 2nd electrode which are connected to the organic semiconductor film, the organic transistor being characterized in that the gate insulating film includes a 1st gate insulating film and a 2nd gate insulating film contacting the gate electrode and the 1st gate insulating film has a higher specific dielectric constant than the 2nd gate insulating film, which has a larger angle of contact with pure water than the 1st gate insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173532(A) 申请公布日期 2006.06.29
申请号 JP20040367729 申请日期 2004.12.20
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 KIKUCHI HIROSHI;FUJISAKI YOSHIHIDE
分类号 H01L29/786;H01L21/336;H01L51/05 主分类号 H01L29/786
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