发明名称 |
Photo-detecting device and related method of formation |
摘要 |
A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
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申请公布号 |
US2006138580(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20050305033 |
申请日期 |
2005.12.19 |
申请人 |
KIM TAE-JIN;YOON KWANG-JOON;CHANG PHIL-JAE;MAENG KYE-WON;PARK YOUNG-JUN |
发明人 |
KIM TAE-JIN;YOON KWANG-JOON;CHANG PHIL-JAE;MAENG KYE-WON;PARK YOUNG-JUN |
分类号 |
H01L31/06 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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