Silicon rich nitride CMOS-compatible light sources and Si-based laser structures

摘要

A fabrication method produces Si compatible light-emitting materials showing sizeable optical gain by thermally annealing thin film layers of Si-rich nitride (SiN_x) By utilizing the Si compatible light-emitting material, light emitting devices can be fabricated that are compatible with CMOS processes. The Si compatible light-emitting material is a high index (refractive index ranging from 1.6 to 2.3) material allowing flexible design of high confinements photonic devices with strong structural stability with respect to annealing treatments. The Si compatible light-emitting material realizes broad band light emission by allowing resonant coupling with rare earth atoms and other infrared emitting quantum dots and better electrical conduction properties with respect to SiO₂ systems. The Si compatible light-emitting material also realizes high transparency (low pumping and modal losses) in the visible range.