| 摘要 |
A method of forming a metal line in a semiconductor device reduces production costs through a simplified fabricating process. The method includes steps of forming a first metal line on a semiconductor substrate; forming an insulating layer over the semiconductor substrate including the first metal line; coating a photoresist on the insulating layer; aligning a diffraction mask having regions or patterns differing from each other in transmittance over the photoresist; patterning the photoresist by exposure and development using the diffraction mask to form a patterned photoresist having regions that differ in thickness; forming a via hole and a trench by etching the patterned photoresist and the insulating layer simultaneously to expose a prescribed portion of the first metal line; removing the remaining photoresist; and forming a second metal line and a contact in the trench and the via hole.
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