发明名称 SILICIDE FORMED FROM TERNARY METAL ALLOY FILMS
摘要 A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides (20). The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon (10), depositing a layer of at least a 3-component metal alloy (30) comprising nickel on a surface of the substrate, and annealing the allow and the substrate. The annealing temperature is less than 1000°C. The 3-component metal alloy can include Ni, Ti and Pt.
申请公布号 WO2005086567(A3) 申请公布日期 2006.06.29
申请号 WO2005IB01457 申请日期 2005.03.15
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;CHI, DONGZHI;LEE, TEK, PO, RINUS;CHUA, SOO JIN 发明人 CHI, DONGZHI;LEE, TEK, PO, RINUS;CHUA, SOO JIN
分类号 H01L21/285;C23C14/16;C23C14/34;H01L21/336;H01L21/44;H01L21/8234 主分类号 H01L21/285
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