NOR flash memory device for use in cell phone, has single sense amplifier to detect most and least significant bits of data stored in memory cell

摘要

A sense amplifier (10a) detects the values of most and least significant bits stored in a memory cell (1a), according to reference current whose magnitude is determined by the output voltages of reference voltage generator (40a). A selection circuit (30a) outputs a selection signal for optimal selection of reference voltage to determine the magnitude of reference current. An independent claim is also included for a method of sequentially detecting values of two or more bits of data stored in a memory.