METHOD FOR GROWING OPTIONALLY COATED BETA-SIC OR ALPHA-SI3N4 NANOWIRES

摘要

The invention concerns a method for growing at a given growth temperature, cubic silicon carbide (Beta-SiC), trigonal silicon nitride (Alpha-Si3N4), or mixed Beta-Sic and Alpha-Si3N4 nanowires. The invention is characterized in that the growth is carried out, in the absence of catalyst, at the growth temperature T, on a graphite growth support, by reacting a carbon derivative in gaseous phase and a silicon derivative in gaseous phase, and optionally a nitrogen derivative in gaseous phase.