发明名称 |
METHOD OF MAKING INACTIVATED SEMICONDUCTOR SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of inactivating a semiconductor substrate containing semiconductor materials other than silicon in connection with a further IC treatment. <P>SOLUTION: The present method of making an inactivated semiconductor substrate, comprises the steps of: providing a front surface of a mono-crystalline substrate containing the semiconductor materials other than silicon, or consisting of the semiconductor materials other than silicon; and forming a silicon layer on a substrate front surface so that the silicon layer may be substantially lattice matched to a corresponding part of the substrate front surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006173574(A) |
申请公布日期 |
2006.06.29 |
申请号 |
JP20050299280 |
申请日期 |
2005.10.13 |
申请人 |
INTERUNIV MICRO ELECTRONICA CENTRUM VZW |
发明人 |
CAYMAX MATTY;BONZOM RENAUD;LEYS FREDERIK;MEURIS MARC |
分类号 |
H01L21/20;H01L21/205;H01L21/316;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L29/16;H01L29/26;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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