发明名称 METHOD OF MAKING INACTIVATED SEMICONDUCTOR SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of inactivating a semiconductor substrate containing semiconductor materials other than silicon in connection with a further IC treatment. <P>SOLUTION: The present method of making an inactivated semiconductor substrate, comprises the steps of: providing a front surface of a mono-crystalline substrate containing the semiconductor materials other than silicon, or consisting of the semiconductor materials other than silicon; and forming a silicon layer on a substrate front surface so that the silicon layer may be substantially lattice matched to a corresponding part of the substrate front surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006173574(A) 申请公布日期 2006.06.29
申请号 JP20050299280 申请日期 2005.10.13
申请人 INTERUNIV MICRO ELECTRONICA CENTRUM VZW 发明人 CAYMAX MATTY;BONZOM RENAUD;LEYS FREDERIK;MEURIS MARC
分类号 H01L21/20;H01L21/205;H01L21/316;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L29/16;H01L29/26;H01L29/78 主分类号 H01L21/20
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