| 摘要 |
PROBLEM TO BE SOLVED: To provide a susceptor that can fully avoid "auto doping", "halo" and disadvantageous nano topography on the front and the back. SOLUTION: The susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g/cm<SP>3</SP>, a pore diameter of less than 0.1 mm and an internal surface area of the pores which is greater than 10,000 cm<SP>2</SP>/cm<SP>3</SP>. COPYRIGHT: (C)2006,JPO&NCIPI |
