发明名称 |
Ion-implanting apparatus, ion-implanting method, and device manufactured thereby |
摘要 |
An ion-implanting apparatus and method that can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring means.
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申请公布号 |
US2006138353(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20040023467 |
申请日期 |
2004.12.29 |
申请人 |
SASAKI YUICHIRO;MIZUNO BUNJI |
发明人 |
SASAKI YUICHIRO;MIZUNO BUNJI |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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