发明名称 NOR-type flash memory device of twin bit cell structure and method of fabricating the same
摘要 A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.
申请公布号 US2006141710(A1) 申请公布日期 2006.06.29
申请号 US20050311367 申请日期 2005.12.20
申请人 YOON JAE-MAN;SUNG SUK-KANG;PARK DONG-GUN;LEE CHOONG-HO;KIM TAE-YONG 发明人 YOON JAE-MAN;SUNG SUK-KANG;PARK DONG-GUN;LEE CHOONG-HO;KIM TAE-YONG
分类号 H01L21/336 主分类号 H01L21/336
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