发明名称 |
NOR-type flash memory device of twin bit cell structure and method of fabricating the same |
摘要 |
A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.
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申请公布号 |
US2006141710(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20050311367 |
申请日期 |
2005.12.20 |
申请人 |
YOON JAE-MAN;SUNG SUK-KANG;PARK DONG-GUN;LEE CHOONG-HO;KIM TAE-YONG |
发明人 |
YOON JAE-MAN;SUNG SUK-KANG;PARK DONG-GUN;LEE CHOONG-HO;KIM TAE-YONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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