| 摘要 |
A method of manufacturing a flash memory device wherein before an insulating film spacer of a contact region is removed after a gate line and source/drain are formed, a high quality buffer oxide film formed between the gate line and the insulating film spacer is made dense by means of an annealing process. Abnormal oxidization is thus prevented from occurring due to an exposed metal layer in a gate when the insulating film spacer is removed as at least part of the buffer oxide remains after the spacer is removed.
|
