| 发明名称 |
P-channel power MIS field effect transistor and switching circuit |
| 摘要 |
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
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| 申请公布号 |
US2006138538(A1) |
申请公布日期 |
2006.06.29 |
| 申请号 |
US20050285772 |
申请日期 |
2005.11.22 |
| 申请人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;AKAHORI HIROSHI;NII KEIICHI;WATANABE TAKANORI |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;AKAHORI HIROSHI;NII KEIICHI;WATANABE TAKANORI |
| 分类号 |
H01L21/316;H01L29/76;H01L21/28;H01L21/318;H01L29/04;H01L29/51;H01L29/78 |
主分类号 |
H01L21/316 |
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